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| 005 - DATE AND TIME OF LATEST TRANSACTION |
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20140310143331.0 |
| 007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION |
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100316s2010 xxu| s |||| 0|eng d |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER |
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| International Standard Book Number |
9781441915474 |
|
978-1-4419-1547-4 |
| 082 04 - DEWEY DECIMAL CLASSIFICATION NUMBER |
|---|
| Classification number |
621.3815 |
| Edition number |
23 |
| 264 #1 - |
|---|
| -- |
Boston, MA : |
| -- |
Springer US : |
| -- |
Imprint: Springer, |
| -- |
2010. |
| 912 ## - |
|---|
| -- |
ZDB-2-ENG |
| 100 1# - MAIN ENTRY--PERSONAL NAME |
|---|
| Personal name |
Oktyabrsky, Serge. |
| Relator term |
editor. |
| 245 10 - IMMEDIATE SOURCE OF ACQUISITION NOTE |
|---|
| Title |
Fundamentals of III-V Semiconductor MOSFETs |
| Medium |
[electronic resource] / |
| Statement of responsibility, etc |
edited by Serge Oktyabrsky, Peide Ye. |
| 300 ## - PHYSICAL DESCRIPTION |
|---|
| Extent |
XVI, 480p. 200 illus., 100 illus. in color. |
| Other physical details |
online resource. |
| 505 0# - FORMATTED CONTENTS NOTE |
|---|
| Formatted contents note |
Non-Silicon MOSFET Technology: A Long Time Coming -- Properties and Trade-Offs of Compound Semiconductor MOSFETs -- Device Physics and Performance Potential of III-V Field-Effect Transistors -- Theory of HfO2-Based High-k Dielectric Gate Stacks -- Density Functional Theory Simulations of High-k Oxides on III-V Semiconductors -- Interfacial Chemistry of Oxides on III-V Compound Semiconductors -- Atomic-Layer Deposited High-k/III-V Metal-Oxide-Semiconductor Devices and Correlated Empirical Model -- Materials and Technologies for III-V MOSFETs -- InGaAs, Ge, and GaN Metal-Oxide-Semiconductor Devices with High-k Dielectrics for Science and Technology Beyond Si CMOS -- Sub-100 nm Gate III-V MOSFET for Digital Applications -- Electrical and Material Characteristics of Hafnium Oxide with Silicon Interface Passivation on III-V Substrate for Future Scaled CMOS Technology -- p-type Channel Field-Effect Transistors -- Insulated Gate Nitride-Based Field Effect Transistors -- Technology/Circuit Co-Design for III-V FETs. |
| 520 ## - SUMMARY, ETC. |
|---|
| Summary, etc |
Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform. |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name as entry element |
Engineering. |
|
|---|
| Topical term or geographic name as entry element |
Systems engineering. |
|
|---|
| Topical term or geographic name as entry element |
Optical materials. |
|
|---|
| Topical term or geographic name as entry element |
Engineering. |
|
|---|
| Topical term or geographic name as entry element |
Circuits and Systems. |
|
|---|
| Topical term or geographic name as entry element |
Solid State Physics. |
|
|---|
| Topical term or geographic name as entry element |
Spectroscopy and Microscopy. |
|
|---|
| Topical term or geographic name as entry element |
Optical and Electronic Materials. |
| 700 1# - ADDED ENTRY--PERSONAL NAME |
|---|
| Personal name |
Ye, Peide. |
| Relator term |
editor. |
| 710 2# - ADDED ENTRY--CORPORATE NAME |
|---|
| Corporate name or jurisdiction name as entry element |
SpringerLink (Online service) |
| 773 0# - HOST ITEM ENTRY |
|---|
| Title |
Springer eBooks |
| 776 08 - ADDITIONAL PHYSICAL FORM ENTRY |
|---|
| Display text |
Printed edition: |
| International Standard Book Number |
9781441915467 |
| 856 40 - ELECTRONIC LOCATION AND ACCESS |
|---|
| Uniform Resource Identifier |
http://dx.doi.org/10.1007/978-1-4419-1547-4 |
| 942 ## - ADDED ENTRY ELEMENTS (KOHA) |
|---|
| Source of classification or shelving scheme |
|
| Item type |
E-Book |
