000 -LEADER |
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02986nam a22004095i 4500 |
003 - CONTROL NUMBER IDENTIFIER |
control field |
OSt |
005 - DATE AND TIME OF LATEST TRANSACTION |
control field |
20140310143337.0 |
007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION |
fixed length control field |
cr nn 008mamaa |
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION |
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120928s2013 xxu| s |||| 0|eng d |
020 ## - INTERNATIONAL STANDARD BOOK NUMBER |
International Standard Book Number |
9781461417491 |
|
978-1-4614-1749-1 |
082 04 - DEWEY DECIMAL CLASSIFICATION NUMBER |
Classification number |
621.3815 |
Edition number |
23 |
264 #1 - |
-- |
New York, NY : |
-- |
Springer New York : |
-- |
Imprint: Springer, |
-- |
2013. |
912 ## - |
-- |
ZDB-2-ENG |
100 1# - MAIN ENTRY--PERSONAL NAME |
Personal name |
Abu-Rahma, Mohamed H. |
Relator term |
author. |
245 10 - IMMEDIATE SOURCE OF ACQUISITION NOTE |
Title |
Nanometer Variation-Tolerant SRAM |
Medium |
[electronic resource] : |
Remainder of title |
Circuits and Statistical Design for Yield / |
Statement of responsibility, etc |
by Mohamed H. Abu-Rahma, Mohab Anis. |
300 ## - PHYSICAL DESCRIPTION |
Extent |
XVI, 170 p. 153 illus., 6 illus. in color. |
Other physical details |
online resource. |
505 0# - FORMATTED CONTENTS NOTE |
Formatted contents note |
Introduction -- Variability in Nanometer Technologies and Impact on SRAM -- Variarion-Tolerant SRAM Write and Read Assist Techniques -- Reducing SRAM Power using Fine-Grained Wordline Pulse Width Control -- A Methodology for Statistical Estimation of Read Access Yield in SRAMs -- Characterization of SRAM Sense Amplifier Input Offset for Yield Prediction. |
520 ## - SUMMARY, ETC. |
Summary, etc |
Variability is one of the most challenging obstacles for IC design in the nanometer regime. In nanometer technologies, SRAM show an increased sensitivity to process variations due to low-voltage operation requirements, which are aggravated by the strong demand for lower power consumption and cost, while achieving higher performance and density. With the drastic increase in memory densities, lower supply voltages, and higher variations, statistical simulation methodologies become imperative to estimate memory yield and optimize performance and power. This book is an invaluable reference on robust SRAM circuits and statistical design methodologies for researchers and practicing engineers in the field of memory design. It combines state of the art circuit techniques and statistical methodologies to optimize SRAM performance and yield in nanometer technologies. Provides comprehensive review of state-of-the-art, variation-tolerant SRAM circuit techniques; Discusses Impact of device related process variations and how they affect circuit and system performance, from a design point of view; Helps designers optimize memory yield, with practical statistical design methodologies and yield estimation techniques. |
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
Topical term or geographic name as entry element |
Engineering. |
|
Topical term or geographic name as entry element |
Computer aided design. |
|
Topical term or geographic name as entry element |
Systems engineering. |
|
Topical term or geographic name as entry element |
Engineering. |
|
Topical term or geographic name as entry element |
Circuits and Systems. |
|
Topical term or geographic name as entry element |
Computer-Aided Engineering (CAD, CAE) and Design. |
700 1# - ADDED ENTRY--PERSONAL NAME |
Personal name |
Anis, Mohab. |
Relator term |
author. |
710 2# - ADDED ENTRY--CORPORATE NAME |
Corporate name or jurisdiction name as entry element |
SpringerLink (Online service) |
773 0# - HOST ITEM ENTRY |
Title |
Springer eBooks |
776 08 - ADDITIONAL PHYSICAL FORM ENTRY |
Display text |
Printed edition: |
International Standard Book Number |
9781461417484 |
856 40 - ELECTRONIC LOCATION AND ACCESS |
Uniform Resource Identifier |
http://dx.doi.org/10.1007/978-1-4614-1749-1 |
942 ## - ADDED ENTRY ELEMENTS (KOHA) |
Source of classification or shelving scheme |
|
Item type |
E-Book |