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Nanometer Variation-Tolerant SRAM (Record no. 10678)

000 -LEADER
fixed length control field 02986nam a22004095i 4500
003 - CONTROL NUMBER IDENTIFIER
control field OSt
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20140310143337.0
007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION
fixed length control field cr nn 008mamaa
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 120928s2013 xxu| s |||| 0|eng d
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9781461417491
978-1-4614-1749-1
082 04 - DEWEY DECIMAL CLASSIFICATION NUMBER
Classification number 621.3815
Edition number 23
264 #1 -
-- New York, NY :
-- Springer New York :
-- Imprint: Springer,
-- 2013.
912 ## -
-- ZDB-2-ENG
100 1# - MAIN ENTRY--PERSONAL NAME
Personal name Abu-Rahma, Mohamed H.
Relator term author.
245 10 - IMMEDIATE SOURCE OF ACQUISITION NOTE
Title Nanometer Variation-Tolerant SRAM
Medium [electronic resource] :
Remainder of title Circuits and Statistical Design for Yield /
Statement of responsibility, etc by Mohamed H. Abu-Rahma, Mohab Anis.
300 ## - PHYSICAL DESCRIPTION
Extent XVI, 170 p. 153 illus., 6 illus. in color.
Other physical details online resource.
505 0# - FORMATTED CONTENTS NOTE
Formatted contents note Introduction -- Variability in Nanometer Technologies and Impact on SRAM -- Variarion-Tolerant SRAM Write and Read Assist Techniques -- Reducing SRAM Power using Fine-Grained Wordline Pulse Width Control -- A Methodology for Statistical Estimation of Read Access Yield in SRAMs -- Characterization of SRAM Sense Amplifier Input Offset for Yield Prediction.
520 ## - SUMMARY, ETC.
Summary, etc Variability is one of the most challenging obstacles for IC design in the nanometer regime.  In nanometer technologies, SRAM show an increased sensitivity to process variations due to low-voltage operation requirements, which are aggravated by the strong demand for lower power consumption and cost, while achieving higher performance and density.  With the drastic increase in memory densities, lower supply voltages, and higher variations, statistical simulation methodologies become imperative to estimate memory yield and optimize performance and power. This book is an invaluable reference on robust SRAM circuits and statistical design methodologies for researchers and practicing engineers in the field of memory design. It combines state of the art circuit techniques and statistical methodologies to optimize SRAM performance and yield in nanometer technologies.   Provides comprehensive review of state-of-the-art, variation-tolerant SRAM circuit techniques; Discusses Impact of device related process variations and how they affect circuit and system performance, from a design point of view; Helps designers optimize memory yield, with practical statistical design methodologies and yield estimation techniques.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Engineering.
Topical term or geographic name as entry element Computer aided design.
Topical term or geographic name as entry element Systems engineering.
Topical term or geographic name as entry element Engineering.
Topical term or geographic name as entry element Circuits and Systems.
Topical term or geographic name as entry element Computer-Aided Engineering (CAD, CAE) and Design.
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Anis, Mohab.
Relator term author.
710 2# - ADDED ENTRY--CORPORATE NAME
Corporate name or jurisdiction name as entry element SpringerLink (Online service)
773 0# - HOST ITEM ENTRY
Title Springer eBooks
776 08 - ADDITIONAL PHYSICAL FORM ENTRY
Display text Printed edition:
International Standard Book Number 9781461417484
856 40 - ELECTRONIC LOCATION AND ACCESS
Uniform Resource Identifier http://dx.doi.org/10.1007/978-1-4614-1749-1
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Source of classification or shelving scheme
Item type E-Book
Copies
Price effective from Permanent location Date last seen Not for loan Date acquired Source of classification or shelving scheme Koha item type Damaged status Lost status Withdrawn status Current location Full call number
2014-03-29AUM Main Library2014-03-29 2014-03-29 E-Book   AUM Main Library621.3815

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