000 -LEADER |
fixed length control field |
02787nam a22004455i 4500 |
003 - CONTROL NUMBER IDENTIFIER |
control field |
OSt |
005 - DATE AND TIME OF LATEST TRANSACTION |
control field |
20140310143339.0 |
007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION |
fixed length control field |
cr nn 008mamaa |
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION |
fixed length control field |
130423s2013 xxu| s |||| 0|eng d |
020 ## - INTERNATIONAL STANDARD BOOK NUMBER |
International Standard Book Number |
9781461468226 |
|
978-1-4614-6822-6 |
082 04 - DEWEY DECIMAL CLASSIFICATION NUMBER |
Classification number |
621.381 |
Edition number |
23 |
264 #1 - |
-- |
New York, NY : |
-- |
Springer New York : |
-- |
Imprint: Springer, |
-- |
2013. |
912 ## - |
-- |
ZDB-2-ENG |
100 1# - MAIN ENTRY--PERSONAL NAME |
Personal name |
Chaudhry, Amit. |
Relator term |
author. |
245 10 - IMMEDIATE SOURCE OF ACQUISITION NOTE |
Title |
Fundamentals of Nanoscaled Field Effect Transistors |
Medium |
[electronic resource] / |
Statement of responsibility, etc |
by Amit Chaudhry. |
300 ## - PHYSICAL DESCRIPTION |
Extent |
XIV, 201 p. 121 illus., 102 illus. in color. |
Other physical details |
online resource. |
505 0# - FORMATTED CONTENTS NOTE |
Formatted contents note |
Scaling of a MOS Transistor -- Nanoscale Effects- Gate Oxide Leakage Currents -- Nanoscale Effects- Inversion Layer Quantization -- Dielectrics for Nanoelectronics -- Germanium Technology -- Biaxial s-Si Technology -- Uniaxial s-Si Technology -- Alternate MOS Structures -- Graphene Technology. |
520 ## - SUMMARY, ETC. |
Summary, etc |
Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book. In summary, this book: Covers the fundamental principles behind nanoelectronics/microelectronics Includes chapters devoted to solutions tackling the quantum mechanical effects occurring at nanoscale Provides some case studies to understand the issue mathematically Fundamentals of Nanoscaled Field Effect Transistors is an ideal book for researchers and undergraduate and graduate students in the field of microelectronics, nanoelectronics, and electronics. |
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
Topical term or geographic name as entry element |
Engineering. |
|
Topical term or geographic name as entry element |
Electronics. |
|
Topical term or geographic name as entry element |
Systems engineering. |
|
Topical term or geographic name as entry element |
Optical materials. |
|
Topical term or geographic name as entry element |
Engineering. |
|
Topical term or geographic name as entry element |
Electronics and Microelectronics, Instrumentation. |
|
Topical term or geographic name as entry element |
Electronic Circuits and Devices. |
|
Topical term or geographic name as entry element |
Circuits and Systems. |
|
Topical term or geographic name as entry element |
Nanoscale Science and Technology. |
|
Topical term or geographic name as entry element |
Optical and Electronic Materials. |
710 2# - ADDED ENTRY--CORPORATE NAME |
Corporate name or jurisdiction name as entry element |
SpringerLink (Online service) |
773 0# - HOST ITEM ENTRY |
Title |
Springer eBooks |
776 08 - ADDITIONAL PHYSICAL FORM ENTRY |
Display text |
Printed edition: |
International Standard Book Number |
9781461468219 |
856 40 - ELECTRONIC LOCATION AND ACCESS |
Uniform Resource Identifier |
http://dx.doi.org/10.1007/978-1-4614-6822-6 |
942 ## - ADDED ENTRY ELEMENTS (KOHA) |
Source of classification or shelving scheme |
|
Item type |
E-Book |