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Nanometer CMOS RFICs for Mobile TV Applications (Record no. 12470)

000 -LEADER
fixed length control field 04276nam a22004215i 4500
003 - CONTROL NUMBER IDENTIFIER
control field OSt
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20140310143358.0
007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION
fixed length control field cr nn 008mamaa
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 100623s2010 ne | s |||| 0|eng d
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9789048186044
978-90-481-8604-4
082 04 - DEWEY DECIMAL CLASSIFICATION NUMBER
Classification number 621.3
Edition number 23
264 #1 -
-- Dordrecht :
-- Springer Netherlands :
-- Imprint: Springer,
-- 2010.
912 ## -
-- ZDB-2-ENG
100 1# - MAIN ENTRY--PERSONAL NAME
Personal name Youssef, Ahmed A.
Relator term author.
245 10 - IMMEDIATE SOURCE OF ACQUISITION NOTE
Title Nanometer CMOS RFICs for Mobile TV Applications
Medium [electronic resource] /
Statement of responsibility, etc by Ahmed A. Youssef, James Haslett.
300 ## - PHYSICAL DESCRIPTION
Extent XV, 200p.
Other physical details online resource.
440 1# - SERIES STATEMENT/ADDED ENTRY--TITLE
Title Analog Circuits and Signal Processing
505 0# - FORMATTED CONTENTS NOTE
Formatted contents note Preface. List of Symbols and Abbreviation -- One: Introduction and Overview. 1.1 Mobile TV Architectures. 1.2 DVB-H Mobile TV System Definitions. 1.3 Scope of This Book -- Two: Wideband CMOS LNA Design Techniques. 2.1 Dynamic Range Limits in MOSFETs. 2.2 Traditional CMOS LNA Topologies. 2.3 Recent Trends in Wideband CMOS LNAs. 2.4 Techniques to Improve the Wideband LNA Dynamic Range. 2.5 Chapter Summary -- Three: Nanometer CMOS LNAs for Mobile TV Receivers. 3.1 Requirements of the LNA in Mobile TV Receivers. 3.2 A 65 nm CMOS Wideband LNA Prototype. 3.3 Experimental Results. 3.4 Chapter Summary -- Four: RF Attenuator Linearization Circuits. 4.1 The Necessity of RF Automatic Gain Control. 4.2 RF Gain Control System Analysis. 4.3 Highly Linear RF Front-End Architectures. 4.4 Design of the Binary Weighted RF Attenuator. 4.5 Practical Considerations. 4.6 A 65 nm CMOS RF Passive Attenuator. 4.7 Chapter Summary -- Five: Wide Dynamic Range Mobile TV Front-End Architecture. 5.1 Mobile TV Front-End with Automatic Gain Control. 5.2 A 65 nm CMOS RF Front-End Prototype. 5.3 Chapter Summary -- Six: Summary and Conclusions. 6.1 Summary and Conclusions. 6.2 Further Research Areas -- References. Index. Author Biographies.
520 ## - SUMMARY, ETC.
Summary, etc The RF front-end is the most fundamental building block of any wireless system. Nanometer CMOS RFICs for Mobile TV Applications brings together what IC design engineers need to know for the development of low-cost, wide-dynamic range RF front-ends for today’s fastest growing communication markets. Drawing on their experience from both industry and academia, the authors use the emerging DVB-H mobile TV standard to provide readers with the step-by-step design progression of the described nanometer CMOS RFICs. Nanometer CMOS RFICs for Mobile TV Applications focuses on how to break the trade-off between power consumption and performance (linearity and noise figure) by optimizing the mobile TV front-end dynamic range in three hierarchical levels: the intrinsic MOSFET level, the circuit level, and the architectural level. It begins by discussing the fundamental concepts of MOSFET dynamic range, including nonlinearity and noise. It then moves to the circuit level introducing the challenges associated with designing wide-dynamic range, variable-gain, broadband low-noise amplifiers (LNAs). The book gives a detailed analysis of a new noise-canceling technique that helps CMOS LNAs achieve a sub - 2 dB wideband noise figure. Lastly, the book deals with the front-end dynamic range optimization process from the systems perspective by introducing the active and passive automatic gain control (AGC) mechanism. By describing in detail the physical realization of several 65 nm CMOS test chips, this book uncovers the practical challenges inherent in using nanometer CMOS technologies for RF circuit design and provides the solutions needed to overcome those challenges.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Engineering.
Topical term or geographic name as entry element Microwaves.
Topical term or geographic name as entry element Engineering.
Topical term or geographic name as entry element Microwaves, RF and Optical Engineering.
Topical term or geographic name as entry element Solid State Physics.
Topical term or geographic name as entry element Spectroscopy and Microscopy.
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Haslett, James.
Relator term author.
710 2# - ADDED ENTRY--CORPORATE NAME
Corporate name or jurisdiction name as entry element SpringerLink (Online service)
773 0# - HOST ITEM ENTRY
Title Springer eBooks
776 08 - ADDITIONAL PHYSICAL FORM ENTRY
Display text Printed edition:
International Standard Book Number 9789048186037
856 40 - ELECTRONIC LOCATION AND ACCESS
Uniform Resource Identifier http://dx.doi.org/10.1007/978-90-481-8604-4
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Source of classification or shelving scheme
Item type E-Book
Copies
Price effective from Permanent location Date last seen Not for loan Date acquired Source of classification or shelving scheme Koha item type Damaged status Lost status Withdrawn status Current location Full call number
2014-04-03AUM Main Library2014-04-03 2014-04-03 E-Book   AUM Main Library621.3

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