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CMOS Processors and Memories (Record no. 12490)

000 -LEADER
fixed length control field 04223nam a22004095i 4500
003 - CONTROL NUMBER IDENTIFIER
control field OSt
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20140310143358.0
007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION
fixed length control field cr nn 008mamaa
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 100806s2010 ne | s |||| 0|eng d
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9789048192168
978-90-481-9216-8
082 04 - DEWEY DECIMAL CLASSIFICATION NUMBER
Classification number 621.3815
Edition number 23
264 #1 -
-- Dordrecht :
-- Springer Netherlands :
-- Imprint: Springer,
-- 2010.
912 ## -
-- ZDB-2-ENG
100 1# - MAIN ENTRY--PERSONAL NAME
Personal name Iniewski, Krzysztof.
Relator term editor.
245 10 - IMMEDIATE SOURCE OF ACQUISITION NOTE
Title CMOS Processors and Memories
Medium [electronic resource] /
Statement of responsibility, etc edited by Krzysztof Iniewski.
300 ## - PHYSICAL DESCRIPTION
Extent VI, 382 p.
Other physical details online resource.
440 1# - SERIES STATEMENT/ADDED ENTRY--TITLE
Title Analog Circuits and Signal Processing
505 0# - FORMATTED CONTENTS NOTE
Formatted contents note Processors -- Design of High Performance Low Power Microprocessors -- Towards High-Performance and Energy-Efficient Multi-core Processors -- Low Power Asynchronous Circuit Design: An FFT/IFFT Processor -- CMOL/CMOS Implementations of Bayesian Inference Engine: Digital and Mixed-Signal Architectures and Performance/Price – A Hardware Design Space Exploration -- A Hybrid CMOS-Nano FPGA Based on Majority Logic: From Devices to Architecture -- Memories -- Memory Systems for Nano-computer -- Flash Memory -- CMOS-based Spin-Transfer Torque Magnetic Random Access Memory (ST–MRAM) -- Magnetization Switching in Spin Torque Random Access Memory: Challenges and Opportunities -- High Performance Embedded Dynamic Random Access Memory in Nano-Scale Technologies -- Timing Circuit Design in High Performance DRAM -- Overview and Scaling Prospect of Ferroelectric Memories.
520 ## - SUMMARY, ETC.
Summary, etc CMOS Processors and Memories addresses the-state-of-the-art in integrated circuit design in the context of emerging computing systems. New design opportunities in memories and processor are discussed. Emerging materials that can take system performance beyond standard CMOS, like carbon nanotubes, graphene, ferroelectrics and tunnel junctions are explored. CMOS Processors and Memories is divided into two parts: processors and memories. In the first part we start with high performance, low power processor design, followed by a chapter on multi-core processing. They both represent state-of-the-art concepts in current computing industry. The third chapter deals with asynchronous design that still carries lots of promise for future computing needs. At the end we present a “hardware design space exploration” methodology for implementing and analyzing the hardware for the Bayesian inference framework. This particular methodology involves: analyzing the computational cost and exploring candidate hardware components, proposing various custom architectures using both traditional CMOS and hybrid nanotechnology CMOL. The first part concludes with hybrid CMOS-Nano architectures. The second, memory part covers state-of-the-art SRAM, DRAM, and flash memories as well as emerging device concepts. Semiconductor memory is a good example of the full custom design that applies various analog and logic circuits to utilize the memory cell’s device physics. Critical physical effects that include tunneling, hot electron injection, charge trapping (Flash memory) are discussed in detail. Emerging memories like FRAM, PRAM and ReRAM that depend on magnetization, electron spin alignment, ferroelectric effect, built-in potential well, quantum effects, and thermal melting are also described. CMOS Processors and Memories is a must for anyone serious about circuit design for future computing technologies. The book is written by top notch international experts in industry and academia. It can be used in graduate course curriculum.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Engineering.
Topical term or geographic name as entry element Systems engineering.
Topical term or geographic name as entry element Engineering.
Topical term or geographic name as entry element Circuits and Systems.
Topical term or geographic name as entry element Solid State Physics.
Topical term or geographic name as entry element Nanotechnology and Microengineering.
710 2# - ADDED ENTRY--CORPORATE NAME
Corporate name or jurisdiction name as entry element SpringerLink (Online service)
773 0# - HOST ITEM ENTRY
Title Springer eBooks
776 08 - ADDITIONAL PHYSICAL FORM ENTRY
Display text Printed edition:
International Standard Book Number 9789048192151
856 40 - ELECTRONIC LOCATION AND ACCESS
Uniform Resource Identifier http://dx.doi.org/10.1007/978-90-481-9216-8
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Source of classification or shelving scheme
Item type E-Book
Copies
Price effective from Permanent location Date last seen Not for loan Date acquired Source of classification or shelving scheme Koha item type Damaged status Lost status Withdrawn status Current location Full call number
2014-04-03AUM Main Library2014-04-03 2014-04-03 E-Book   AUM Main Library621.3815

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