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Technology of Gallium Nitride Crystal Growth (Record no. 26758)

000 -LEADER
fixed length control field 02873nam a22004455i 4500
003 - CONTROL NUMBER IDENTIFIER
control field OSt
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20140310153032.0
007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION
fixed length control field cr nn 008mamaa
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 100623s2010 gw | s |||| 0|eng d
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9783642048302
978-3-642-04830-2
050 #4 - LIBRARY OF CONGRESS CALL NUMBER
Classification number QD901-999
082 04 - DEWEY DECIMAL CLASSIFICATION NUMBER
Classification number 548
Edition number 23
264 #1 -
-- Berlin, Heidelberg :
-- Springer Berlin Heidelberg,
-- 2010.
912 ## -
-- ZDB-2-PHA
100 1# - MAIN ENTRY--PERSONAL NAME
Personal name Ehrentraut, Dirk.
Relator term editor.
245 10 - IMMEDIATE SOURCE OF ACQUISITION NOTE
Title Technology of Gallium Nitride Crystal Growth
Medium [electronic resource] /
Statement of responsibility, etc edited by Dirk Ehrentraut, Elke Meissner, Michal Bockowski.
300 ## - PHYSICAL DESCRIPTION
Extent XX, 334p. 400 illus., 200 illus. in color.
Other physical details online resource.
440 1# - SERIES STATEMENT/ADDED ENTRY--TITLE
Title Springer Series in Materials Science,
International Standard Serial Number 0933-033X ;
Volume number/sequential designation 133
505 0# - FORMATTED CONTENTS NOTE
Formatted contents note Market for Bulk GaN Crystals -- Development of the Bulk GaN Substrate Market -- Vapor Phase Growth Technology -- Hydride Vapor Phase Epitaxy of GaN -- Growth of Bulk GaN Crystals by HVPE on Single Crystalline GaN Seeds -- Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy Using Void-Assisted Separation Technology -- Nonpolar and Semipolar GaN Growth by HVPE -- High Growth Rate MOVPE -- Solution Growth Technology -- Ammonothermal Growth of GaN Under Ammono-Basic Conditions -- A Pathway Toward Bulk Growth of GaN by the Ammonothermal Method -- Acidic Ammonothermal Growth Technology for GaN -- Flux Growth Technology -- High Pressure Solution Growth of Gallium Nitride -- A Brief Review on the Na-Flux Method Toward Growth of Large-Size GaN Crystal -- Low Pressure Solution Growth of Gallium Nitride -- Characterization of GaN Crystals -- Optical Properties of GaN Substrates -- Point Defects and Impurities in Bulk GaN Studied by Positron Annihilation Spectroscopy.
520 ## - SUMMARY, ETC.
Summary, etc This book deals with the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production. Leading experts from industry and academia report in a very comprehensive way on the current state-of-the-art of the growth technologies and optical and structural properties of the GaN crystals are compared.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Physics.
Topical term or geographic name as entry element Crystallography.
Topical term or geographic name as entry element Optical materials.
Topical term or geographic name as entry element Physics.
Topical term or geographic name as entry element Crystallography.
Topical term or geographic name as entry element Optical and Electronic Materials.
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Meissner, Elke.
Relator term editor.
Personal name Bockowski, Michal.
Relator term editor.
710 2# - ADDED ENTRY--CORPORATE NAME
Corporate name or jurisdiction name as entry element SpringerLink (Online service)
773 0# - HOST ITEM ENTRY
Title Springer eBooks
776 08 - ADDITIONAL PHYSICAL FORM ENTRY
Display text Printed edition:
International Standard Book Number 9783642048289
856 40 - ELECTRONIC LOCATION AND ACCESS
Uniform Resource Identifier http://dx.doi.org/10.1007/978-3-642-04830-2
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Source of classification or shelving scheme
Item type E-Book
Copies
Price effective from Permanent location Date last seen Not for loan Date acquired Source of classification or shelving scheme Koha item type Damaged status Lost status Withdrawn status Current location Full call number
2014-04-17AUM Main Library2014-04-17 2014-04-17 E-Book   AUM Main Library548