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005 - DATE AND TIME OF LATEST TRANSACTION |
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20140310153330.0 |
007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION |
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110112s2011 gw | s |||| 0|eng d |
020 ## - INTERNATIONAL STANDARD BOOK NUMBER |
International Standard Book Number |
9783642163043 |
|
978-3-642-16304-3 |
050 #4 - LIBRARY OF CONGRESS CALL NUMBER |
Classification number |
TA1750-1750.22 |
082 04 - DEWEY DECIMAL CLASSIFICATION NUMBER |
Classification number |
620.11295 |
Edition number |
23 |
|
Classification number |
620.11297 |
Edition number |
23 |
264 #1 - |
-- |
Berlin, Heidelberg : |
-- |
Springer Berlin Heidelberg, |
-- |
2011. |
912 ## - |
-- |
ZDB-2-CMS |
100 1# - MAIN ENTRY--PERSONAL NAME |
Personal name |
Bentarzi, Hamid. |
Relator term |
author. |
245 10 - IMMEDIATE SOURCE OF ACQUISITION NOTE |
Title |
Transport in Metal-Oxide-Semiconductor Structures |
Medium |
[electronic resource] : |
Remainder of title |
Mobile Ions Effects on the Oxide Properties / |
Statement of responsibility, etc |
by Hamid Bentarzi. |
300 ## - PHYSICAL DESCRIPTION |
Extent |
XIV, 106 p. |
Other physical details |
online resource. |
440 1# - SERIES STATEMENT/ADDED ENTRY--TITLE |
Title |
Engineering Materials, |
International Standard Serial Number |
1612-1317 |
505 0# - FORMATTED CONTENTS NOTE |
Formatted contents note |
Introduction -- The MOS Structure -- The MOS Oxide and Its Defects -- Review of Transport Mechanism in Thin Oxides of MOS Devices -- Experimental Techniques -- Theoretical Approaches of Mobile Ions Density Distribution Determination -- Theoretical Model of Mobile Ions Distribution and Ionic Current in the MOS Oxide. |
520 ## - SUMMARY, ETC. |
Summary, etc |
This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different types of charges presented in their structure. A review on ionic transport mechanisms and techniques for measuring the mobile ions concentration in the oxides is given, special attention being attempted to the Charge Pumping (CP) technique associated with the Bias Thermal Stress (BTS) method. Theoretical approaches to determine the density of mobile ions as well as their distribution along the oxide thickness are also discussed. The content varies from general to very specific examples, helping the reader to learn more about transport in MOS structures. |
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
Topical term or geographic name as entry element |
Optical materials. |
|
Topical term or geographic name as entry element |
Surfaces (Physics). |
|
Topical term or geographic name as entry element |
Materials Science. |
|
Topical term or geographic name as entry element |
Optical and Electronic Materials. |
|
Topical term or geographic name as entry element |
Semiconductors. |
|
Topical term or geographic name as entry element |
Characterization and Evaluation of Materials. |
|
Topical term or geographic name as entry element |
Solid State Physics. |
710 2# - ADDED ENTRY--CORPORATE NAME |
Corporate name or jurisdiction name as entry element |
SpringerLink (Online service) |
773 0# - HOST ITEM ENTRY |
Title |
Springer eBooks |
776 08 - ADDITIONAL PHYSICAL FORM ENTRY |
Display text |
Printed edition: |
International Standard Book Number |
9783642163036 |
856 40 - ELECTRONIC LOCATION AND ACCESS |
Uniform Resource Identifier |
http://dx.doi.org/10.1007/978-3-642-16304-3 |
942 ## - ADDED ENTRY ELEMENTS (KOHA) |
Source of classification or shelving scheme |
|
Item type |
E-Book |