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Transport in Metal-Oxide-Semiconductor Structures (Record no. 27759)

000 -LEADER
fixed length control field 02633nam a22004455i 4500
003 - CONTROL NUMBER IDENTIFIER
control field OSt
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20140310153330.0
007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION
fixed length control field cr nn 008mamaa
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 110112s2011 gw | s |||| 0|eng d
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9783642163043
978-3-642-16304-3
050 #4 - LIBRARY OF CONGRESS CALL NUMBER
Classification number TA1750-1750.22
082 04 - DEWEY DECIMAL CLASSIFICATION NUMBER
Classification number 620.11295
Edition number 23
Classification number 620.11297
Edition number 23
264 #1 -
-- Berlin, Heidelberg :
-- Springer Berlin Heidelberg,
-- 2011.
912 ## -
-- ZDB-2-CMS
100 1# - MAIN ENTRY--PERSONAL NAME
Personal name Bentarzi, Hamid.
Relator term author.
245 10 - IMMEDIATE SOURCE OF ACQUISITION NOTE
Title Transport in Metal-Oxide-Semiconductor Structures
Medium [electronic resource] :
Remainder of title Mobile Ions Effects on the Oxide Properties /
Statement of responsibility, etc by Hamid Bentarzi.
300 ## - PHYSICAL DESCRIPTION
Extent XIV, 106 p.
Other physical details online resource.
440 1# - SERIES STATEMENT/ADDED ENTRY--TITLE
Title Engineering Materials,
International Standard Serial Number 1612-1317
505 0# - FORMATTED CONTENTS NOTE
Formatted contents note Introduction -- The MOS Structure -- The MOS Oxide and Its Defects -- Review of Transport Mechanism in Thin Oxides of MOS Devices -- Experimental Techniques -- Theoretical Approaches of Mobile Ions Density Distribution Determination -- Theoretical Model of Mobile Ions Distribution and Ionic Current in the MOS Oxide.
520 ## - SUMMARY, ETC.
Summary, etc This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different types of charges presented in their structure. A review on ionic transport mechanisms and techniques for measuring the mobile ions concentration in the oxides is given, special attention being attempted to the Charge Pumping (CP) technique associated with the Bias Thermal Stress (BTS) method. Theoretical approaches to determine the density of mobile ions as well as their distribution along the oxide thickness are also discussed. The content varies from general to very specific examples, helping the reader to learn more about transport in MOS structures.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Optical materials.
Topical term or geographic name as entry element Surfaces (Physics).
Topical term or geographic name as entry element Materials Science.
Topical term or geographic name as entry element Optical and Electronic Materials.
Topical term or geographic name as entry element Semiconductors.
Topical term or geographic name as entry element Characterization and Evaluation of Materials.
Topical term or geographic name as entry element Solid State Physics.
710 2# - ADDED ENTRY--CORPORATE NAME
Corporate name or jurisdiction name as entry element SpringerLink (Online service)
773 0# - HOST ITEM ENTRY
Title Springer eBooks
776 08 - ADDITIONAL PHYSICAL FORM ENTRY
Display text Printed edition:
International Standard Book Number 9783642163036
856 40 - ELECTRONIC LOCATION AND ACCESS
Uniform Resource Identifier http://dx.doi.org/10.1007/978-3-642-16304-3
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Source of classification or shelving scheme
Item type E-Book
Copies
Price effective from Permanent location Date last seen Not for loan Date acquired Source of classification or shelving scheme Koha item type Damaged status Lost status Withdrawn status Current location Full call number
2014-04-14AUM Main Library2014-04-14 2014-04-14 E-Book   AUM Main Library620.11295

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