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GaN-Based Laser Diodes

by Scheibenzuber, Wolfgang G.
Authors: SpringerLink (Online service) Series: Springer Theses Physical details: XIV, 98 p. online resource. ISBN: 3642245382 Subject(s): Physics. | Physics. | Laser Technology, Photonics. | Semiconductors. | Optics, Optoelectronics, Plasmonics and Optical Devices.
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E-Book E-Book AUM Main Library 621.36 (Browse Shelf) Not for loan

Basic Concepts -- Thermal Properties -- Light Propagation and Amplification in Laser Diodes from Violet to Green -- Semipolar Crystal Orientations for Green Laser Diodes -- Dynamics of Charge Carriers and Photons -- Short-Pulse Laser Diodes.

The emergence of highly efficient short-wavelength laser diodes based on the III-V compound semiconductor GaN has not only enabled high-density optical data storage, but is also expected to revolutionize display applications. Moreover, a variety of scientific applications in biophotonics, materials research and quantum optics can benefit from these versatile and cost-efficient laser light sources in the near-UV to green spectral range. This thesis describes the device physics of GaN-based laser diodes, together with recent efforts to achieve longer emission wavelengths and short-pulse emission. Experimental and theoretical approaches are employed to address the individual device properties and optimize the laser diodes toward the requirements of specific applications.

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