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Design and Realization of Novel GaAs Based Laser Concepts

by Germann, Tim David.
Authors: SpringerLink (Online service) Series: Springer Theses, Recognizing Outstanding Ph.D. Research, 2190-5053 Physical details: XIII, 150 p. 84 illus., 61 illus. in color. online resource. ISBN: 3642340792 Subject(s): Physics. | Optical materials. | Nanotechnology. | Physics. | Semiconductors. | Optical and Electronic Materials. | Laser Technology, Photonics. | Nanoscale Science and Technology. | Nanotechnology.
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E-Book E-Book AUM Main Library 537.622 (Browse Shelf) Not for loan

Semiconductor Laser Concepts -- Experimental -- MOVPE Processes -- Edge-Emitting Quantum Dot Lasers -- High-Power Vertical External-Cavity Surface-Emitting Lasers -- Electro-optically Modulated Vertical-Cavity Surface-Emitting Lasers -- Summary and Outlook -- Additional Methods.

Semiconductor heterostructures represent the backbone for an increasing variety of electronic and photonic devices, for applications including information storage, communication and material treatment, to name but a few. Novel structural and material concepts are needed in order to further push the performance limits of present devices and to open up new application areas. This thesis demonstrates how key performance characteristics of three completely different types of semiconductor lasers can be tailored using clever nanostructure design and epitaxial growth techniques. All aspects of laser fabrication are discussed, from design and growth of nanostructures using metal-organic vapor-phase epitaxy, to fabrication and characterization of complete devices.

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